?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com fqb9n50cf rev. a fqb9n50cf 500v n-channel mosfet october 2006 frfet tm fqb9n50cf 500v n-channel mosfet features ? 9a, 500v, r ds(on) = 0.85 ? @v gs = 10 v ? low gate charge ( typical 28nc) ? low crss ( typical 24pf) ?fast switching ? 100% avalanche tested ? improved dv/dt capability description these n-channel enhancement mode power field effect transis- tors are produced using fairchil d?s proprietary, planar stripe, dmos technology. this advanced technology has be en especially tailored to mini- mize on-state resistance, prov ide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high effi- ciency switched mode power supplies, electronic lamp ballasts based on half bridge topology. absolute maximum ratings thermal characteristics d 2 -pak fqb series gs d d g s symbol parameter fqb9n50cf units v dss drain-source voltage 500 v i d drain current - continuous (t c = 25c) 9 a - continuous (t c = 100c) 5.7 a i dm drain current - pulsed (note 1) 36 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 300 mj i ar avalanche current (note 1) 5a e ar repetitive avalanche energy (note 1) 9.6 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25c) 173 w - derate above 25c 1.38 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 c symbol parameter fqb9n50cf units r jc thermal resistance, junction-to-case 0.72 c / w r ja thermal resistance, junction-to-ambient* 40 c / w r ja thermal resistance, junction-to-ambient 62.5 c / w * when mounted on the minimum pad size recommended (pcb mount)
2 www.fairchildsemi.com fqb9n50cf rev. a fqb9n50cf 500v n-channel mosfet package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 8mh, i as = 9a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 9a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature device marking device package reel size tape width quantity fqb9n50cf FQB9N50CFTM d2-pak 330mm 24mm 800 fqb9n50cfs FQB9N50CFTM_ws d2-pak 330mm 24mm 800 symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 500 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.57 -- v/c i dss zero gate voltage drain current v ds = 500 v, v gs = 0 v -- -- 10 a v ds = 400 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a2.0--4.0v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 4.5a -- 0.7 0.85 ? g fs forward transconductance v ds = 40 v, i d = 4.5 a (note 4) -- 6.5 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 790 1030 pf c oss output capacitance -- 130 170 pf c rss reverse transfer capacitance -- 24 30 pf switching characteristics t d(on) turn-on delay time v dd = 250 v, i d = 9a, r g = 25 ? (note 4, 5) -- 18 45 ns t r turn-on rise time -- 65 140 ns t d(off) turn-off delay time -- 93 195 ns t f turn-off fall time -- 64 125 ns q g total gate charge v ds = 400 v, i d = 9a, v gs = 10 v (note 4, 5) -- 28 35 nc q gs gate-source charge -- 4 -- nc q gd gate-drain charge -- 15 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 9 a i sm maximum pulsed drain-source diode forward current -- -- 36 a v sd drain-source diode forward voltage v gs = 0 v, i s = 9 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 9 a, di f / dt = 100 a/ s (note 4) -- 100 -- ns q rr reverse recovery charge -- 300 -- nc
3 www.fairchildsemi.com fqb9n50cf rev. a fqb9n50cf 500v n-channel mosfet typical performance characteristics figure 1. on-region characteristics f igure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs . source current and temperatue figure 5. capacitance characteristics f igure 6. gate charge characteristics 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v notes : ? 1. 250 s pulse test 2. t c = 25 ? i d , drain current [a] v ds , drain-source voltage [v] 246810 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : ? 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 ? notes : ? 1. v gs = 0v 2. 250 s pulse test 25 ? i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 5 10 15 20 25 0.5 1.0 1.5 2.0 v gs = 20v v gs = 10v note : t ? j = 25 ? r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0 5 10 15 20 25 30 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v note : i ? d = 9a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 400 800 1200 1600 2000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; ? 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v]
4 www.fairchildsemi.com fqb9n50cf rev. a fqb9n50cf 500v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : ? 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : ? 1. v gs = 10 v 2. i d = 4.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 dc 100ms 10ms 1ms 100 s 10 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-sourcevoltage[v] 25 50 75 100 125 150 0 2 4 6 8 10 i d , drain current [a] t c , case temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z jc (t) = 0.72 0 c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ?jc (t), thermal response t 1 , square wave pulse duration [sec] t 1 p dm t 2
5 www.fairchildsemi.com fqb9n50cf rev. a fqb9n50cf 500v n-channel mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
6 www.fairchildsemi.com fqb9n50cf rev. a fqb9n50cf 500v n-channel mosfet peak diode recovery dv/dt test circuit & waveforms
7 www.fairchildsemi.com fqb9n50cf rev. a fqb9n50cf 500v n-channel mosfet mechanical dimensions d2-pak dimensions in millimeters
8 www.fairchildsemi.com fqb9n50cf rev. a fqb9n50cf 500v n-channel mosfet trademarks the following are registered and unregistered tr ademarks fairchild semiconductor owns or is authorized to use and is not intend ed to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without furthe r notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it co nvey any license under its paten t rights, nor the rights of others. these specifications do not expand the terms of fa irchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fast ? fastr? fps? frfet? fact quiet series? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? scalarpump? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc? unifet? ultrafet ? vcx? wire? across the board. around the world.? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specif ications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor rese rves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. i20
careers | sitema go datasheets, samples, buy technical information applications design center support company investors my f a home >> find products >> product status/pricing/packaging fqb9n50cf 500v n-channel mosfet general description back to top features back to top contents ? general description ? features ? product status/pricing/packaging ? order samples ? qualification support these n-channel enhancement mode pow er field effect transistors are produced using fairchild's proprietar y, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switchin g performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. z 9a, 500v, r ds(on) = 0.85 ? @ v gs = 10v z low gate charge ( typical 28nc) z low c rss ( typical 24pf) z fast switching z 100% avalanche tested z improved dv/dt capability datasheet download this datasheet e - mail this datasheet this page print version product product status pb-free status pricing* package type leads packing method package marking convention** related links request samples how to order products product change notices (pcns) support sales support quality and reliability design cente r pa g e 1 of 2 product folder - fairchild p/n fq b9n50cf - 500v n-channel mosfet 17-au g -2007 mhtml:file://c:\temp\FQB9N50CFTM.mht
back to top qualification support click on a product for detailed qualification data back to top FQB9N50CFTM full production $1.40 to - 263(d2pak) 2 tape reel line 1: $y (fairchild logo) & z (asm. plant code) &e& 3 (3-digit date code) line 2: fqb line 3: 9n50cf * fairchild 1,000 piece budgetary pricing ** a sample button will appear if the part is available through fa irchild's on-line samples program. if there is no sample butt on, please contact a fairchild distributor to obtain samples indicates product with pb -free second-level interconne ct. for more information click here. package marking information for product fqb9n50cf is available. click here for more information . product FQB9N50CFTM ? 2007 fairchild semiconductor products | design center | support | company news | investors | my fairchild | contact us | site index | privacy policy | site terms & conditions | standard terms & conditions o pa g e 2 of 2 product folder - fairchild p/n fq b9n50cf - 500v n-channel mosfet 17-au g -2007 mhtml:file://c:\temp\FQB9N50CFTM.mht
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